Part Number Hot Search : 
STA328 R2500 40101 A2737 G62FP BR101 SMB30C IC18F
Product Description
Full Text Search
 

To Download IRG4PH40K Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 PD - 91578B
IRG4PH40K
INSULATED GATE BIPOLAR TRANSISTOR
Features
* High short circuit rating optimized for motor control, tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V * Combines low conduction losses with high switching speed * Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
C
Short Circuit Rated UltraFast IGBT
VCES = 1200V
G E
VCE(on) typ. = 2.74V
@VGE = 15V, IC = 15A
n-channel
Benefits
* As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT * Latest generation 4 IGBT's offer highest power density motor controls possible * This part replaces the IRGPH40K and IRGPH40M devices
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
1200 30 15 60 60 10 20 180 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m)
Units
V A
s V mJ W
C
Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
--- 0.24 --- 6 (0.21)
Max.
0.77 --- 40 ---
Units
C/W g (oz)
www.irf.com
1
2/7/2000
IRG4PH40K
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th) VGE(th)/TJ gfe ICES IGES
Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage T 18 -- -- V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage -- 0.37 -- V/C VGE = 0V, IC = 1.0mA -- 2.54 -- IC = 10A -- 2.74 3.4 IC = 15A VGE = 15V Collector-to-Emitter Saturation Voltage V -- 3.29 -- IC = 30A See Fig.2, 5 -- 2.53 -- IC = 15A , TJ = 150C Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -3.3 -- mV/C VCE = VGE, IC = 250A Forward Transconductance U 8.0 12 -- S VCE = 100 V, IC = 15A -- -- 250 VGE = 0V, VCE = 1200V Zero Gate Voltage Collector Current -- -- 2.0 A VGE = 0V, VCE = 10V, TJ = 25C -- -- 3000 VGE = 0V, VCE = 1200V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets Eon Eoff Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 94 140 IC = 15A 14 22 nC VCC = 400V See Fig.8 37 55 VGE = 15V 30 -- 22 -- TJ = 25C ns 200 300 IC = 15A, VCC = 960V 150 230 VGE = 15V, RG = 10 0.73 -- Energy losses include "tail" 1.66 -- mJ See Fig. 9,10,14 2.39 2.9 -- -- s VCC = 720V, TJ = 125C VGE = 15V, RG = 10 29 -- TJ = 150C, 24 -- IC = 15A, VCC = 960V ns 870 -- VGE = 15V, RG = 10 330 -- Energy losses include "tail" 4.93 -- mJ See Fig. 10,11,14 0.37 -- TJ = 25C, VGE = 15V, RG = 10 0.89 -- mJ IC = 10A, VCC = 960V 1.26 -- Energy losses include "tail" 13 -- nH Measured 5mm from package 1600 -- VGE = 0V 77 -- pF VCC = 30V See Fig. 7 26 -- = 1.0MHz
Details of note Q through U are on the last page
2
www.irf.com
IRG4PH40K
50 F o r b o th :
T ria n g u la r w a ve :
I
40
D uty c yc le: 50% T J = 125 C T s ink = 90C G ate drive as spec ified
P o w e r D is s ip a tio n = 3 5 W
Load Current ( A )
C la m p vo l ta g e : 8 0 % o f ra te d
30 S q u a re wave : 6 0 % o f ra te d v o lta g e 20
I
10 Id e al d io de s
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
TJ = 150 C
10
TJ = 150 C
10
TJ = 25 C
TJ = 25 C V = 50V 5s PULSE WIDTH
CC 4 6 8 10 12 14
1 1
V = 15V 20s PULSE WIDTH
GE 10
1
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
www.irf.com
3
IRG4PH40K
30 4.0 25
VCE , Collector-to-Emitter Voltage(V)
V = 15V 80 us PULSE WIDTH
GE
Maximum DC Collector Current(A)
3.5
IC = 30 A
20
15
3.0
10
IC = 15 A
2.5
5
IC = 7.5 A
0 25 50 75 100 125 150
2.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
1
Thermal Response (Z thJC )
D = 0.50
0.20 0.1
0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4PH40K
2500
2000
VGE , Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 15A
16
C, Capacitance (pF)
Cies
1500
12
1000
8
500
C oes C res
0 1 10 100
4
0 0 20 40 60 80 100
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
4.0
Total Switching Losses (mJ)
Total Switching Losses (mJ)
3.5
V CC = 960V V GE = 15V TJ = 25 C I C = 15A
100
RG = 10 Ohm VGE = 15V VCC = 960V
IC = 30 A
10
IC = 15 A IC = 7.5 A
1
3.0
2.5
2.0 0 10 20 30 40 50
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG G Gate Resistance (Ohm) R , , Gate Resistance ( )
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
www.irf.com
5
IRG4PH40K
15
9
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG TJ VCC 12 VGE
=10 Ohm = 150 C = 960V = 15V
100
VGE = 20V T J = 125 oC
10
6
3
0 0 5 10 15 20 25
SAFE OPERATING AREA
1 30 1 10 100 1000 10000
I C , Collector-to-emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
6
www.irf.com
IRG4PH40K
L 50V 1 00 0V VC *
0 - 960V
D .U .T.
RL = 960V 4 X I C@25C
480F 960V R
Q
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
IC L D river* 50V 1000V Q R S
* Driver same type as D.U.T., VC = 960V
D .U .T. VC
Fig. 14a - Switching Loss
Test Circuit
Q
R
90 %
S
10 % 90 %
VC
t d (o ff)
Fig. 14b - Switching Loss
Waveforms
1 0% IC 5% t d (o n )
tr Eon E ts = (E o n +E o ff )
tf t=5 s E o ff
www.irf.com
7
IRG4PH40K
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
S Repetitive rating; pulse width limited by maximum
junction temperature.
R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10,
(See fig. 13a)
T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot.
Case Outline and Dimensions -- TO-247AC
3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7)
-D-
1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B-
5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4
N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C .
2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3
2X
5 .5 0 (.2 17 ) 4 .5 0 (.1 77 )
-C-
LEAD 1234-
A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R
*
1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 )
4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 )
*
3X C AS 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 )
2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X
L O N G E R L E A D E D (2 0m m ) V E R S IO N A V A IL A B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER
3X
1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M
3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 )
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n s ion s in M illim e te rs a n d (In c h es )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00
8
www.irf.com


▲Up To Search▲   

 
Price & Availability of IRG4PH40K

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X